Trap Densities in ZnO TFTs with SiN_x/SiO_x Stacked Gate Insulators Fabricated using Several N_2O Flow Rate during SiO_x Deposition

摘要

The trap densities (D_t) in ZnO thin-film transistors (TFTs) with SiN_x/SiO_x stacked gate insulators fabricated using several N_2O flow rate during SiO_x deposition (R_(N_2O)) are extracted. It is found that the trap states consist of deep flat states and shallow tail states. The deep states are similar, whereas the tail states vary as R_(N_2O) varies. It is also found that the degree of the characteristic stability corresponds to D_t of the tail states.