Novel Integration Process for IGZO MO-TFT Fabrication on Gen 8.5 PECVD and PVD Systems A Quest to Improve TFT Stability and Mobility

摘要

IGZO is one of the promising materials being used to make high-mobility TFTs for high-quality displays. However, a-IGZO TFTs have stability issues in addition to limited mobility (＜10 cm~2/Vs). AKT has made a stable a-IGZO TFT through ESL optimization and plasma treatment of the IGZO interface. AKT a-IGZO ES-TFT shows SS 0.4 ±0.1 V/dec, mobility 10 ±1.0 cm~2/Vs, Von 0.25 ± 1.5V over 2200 x 2500 mm~2 substrate. BTS stability range under 80°C, ±50V conditions is ～1.5V. Furthermore, another AKT MO ES-TFT shows ＞30 cm~2/V·s mobility using multi-layer structure.