A Microwave Injection-Locking Outphasing Modulator with 30dB Dynamic Range and 22 System Efficiency in 45nm CMOS SOI

摘要

High-capacity microwave systems demand high-efficiency transmit architectures that support complex waveforms with high peak-to-average-power-ratio (PAPR) modulation. The outphasing scheme transforms the arbitrary amplitude and phase of a complex signal into two phase-modulated constant-envelope waveforms and allows the power amplifiers (PAs) to operate at peak power and efficiency while transmitting high PAPR waveforms. Recent work has adopted outphasing modulation with off-chip digital signal processing (DSP) [1-3], or with on-chip DSP approximations [4]. However, these approaches tend to require high power consumption and degrade the overall system power efficiency as symbol rates scale up.