首页> 外文会议>IEEE International Solid-State Circuits Conference >A Fully-Integrated Half-Duplex Data/Power Transfer System with up to 40Mb/s Data Rate, 23mW Output Power and On-Chip 5kV Galvanic Isolation
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A Fully-Integrated Half-Duplex Data/Power Transfer System with up to 40Mb/s Data Rate, 23mW Output Power and On-Chip 5kV Galvanic Isolation

机译:全集成的半双工数据/电源传输系统,可高达40MB / s数据速率,23MW输出电源和片上5KV电压隔离

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Galvanic isolation is becoming an essential requisite for several low-power applications, such as sensor interfaces and medical devices. In the last years, different solutions of silicon-integrated data transmission with galvanic isolation have been proposed that are based on RF links [1], capacitive couplings [2] or integrated coreless transformers [3]. As far as the power transfer is concerned, a dedicated link exploiting a discrete transformer is the typical solution. State-of-the-art devices currently adopt post-processed technologies and thick Au metals to implement the power link [4]. In this work, a fully integrated system is demonstrated for galvanically isolated power and bidirectional half-duplex data transfer by using a single integrated transformer [5].
机译:电流隔离正成为几种低功耗应用的必要条件,例如传感器接口和医疗设备。在过去几年中,已经提出了基于RF链路[1],电容耦合[2]或集成无光丝变压器[3]的不同解决电流隔离的不同解决方案。就电力传输而言,它专用链接利用离散变压器是典型的解决方案。最先进的设备目前采用后处理的技术和厚的AU金属来实现电源链路[4]。在这项工作中,通过使用单个集成变压器[5],对电流隔离电源和双向半双工数据传输进行了完全集成的系统。

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