Interface processing of amorphous-crystalline silicon heterojunction prior to the formation of amorphous-to-nanocrystalline transition phase

摘要

Two effective interface optimization, including hydrogen-plasma treatment (HPT) and oxygen incorporation (OIn), have been investigated to optimization interface structure and promote the formation of hydrogenated amorphous silicon (a-Si:H) bulk with amorphous-to-nanocrystalline transition phase based on the surface passivation of crystalline silicon (c-Si). Both multi-steps HPT and the intentional OIn are capable of producing a compact interface and a transition phase bulk. An appropriate multi-steps HPT is taking responsibility for modifying the a-Si:H bulk to a transition phase while an effective OIn makes a disordering interface and a crystallites- isolated bulk structure.