首页>
外国专利>
Optical storage medium with reversible phase transitions - comprising tellurium-arsenic-germanium amorphous-crystalline layer on glass substrate
Optical storage medium with reversible phase transitions - comprising tellurium-arsenic-germanium amorphous-crystalline layer on glass substrate
展开▼
机译:具有可逆相变的光学存储介质-在玻璃基板上包括碲-砷-锗非晶晶体层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A reversible, optical recording medium is disclosed, with at least one substrate and at least one Te-As-Ge contg. storage layer of the phase transition type. The storage layer is formed from a Te-As-Ge alloy with a Ge content between 8 and 24 atomic % and an As content between 19 and 39 atomic %. A dielectric layer is deposited on at least one side of the storage layer. A reflection layer is deposited between the storage/dielectric layer system and the substrate, or on the side of the substrate opposite the layer system. The layers are formed by sputtering or evapn. ADVANTAGE - The device is highly sensitive, can be written to at temps. below 600 deg.C and erased in less than 300 ns. It has a high reflection contrast between the amorphous and crystalline states. The crystallisation temp. is above 1000 deg.C, so that stability of the recorded information is ensured over a long period of time.
展开▼