Design and Simulation of Multi-Quantum-Well GaAsl AIGaAs Single Junction p-i-n with Back Surface DBR Reflector

摘要

This paper reports on the design and simulation of a Multi Quantum Well (MQW) AIGaAs/GaAs single p-i-n junction solar cell with a Distributed Bragg Reflector (DBR) placed at back surface. The DBR structure reflects the part of the spectrum that benefits from absorption in the AIGaAs QW structure, while being transparent to the IR spectrum. The efficiencies and short-circuit currents for the AIGaAs MQW cell with and without DBR are simulated. The efficiencies and shortcircuit currents of an optimized AIGaAs MQW cell with and without DBR are simulated. Results obtained show improvement in short circuit current, open circuit voltage and efficiency when both MQW and DBR were used. Simulation results predict an efficiency of about 28.4% for the MQW AIGaAs-DBR single p-in junction photovoltaic cell under the presence of both radiative and non-radiative recombination mechanisms.