A novel scallop free TSV etching method in magnetic neutral loop discharge plasma

摘要

In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional two-dimensional devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing.