p-n JUNCTION FORMATION FROM SOL-GEL BASED SOURCE

摘要

Paper is devoted to the sol-gel containing dopands preparation technology. Sol-gel doping can bepromising alternative to gas doping source for Si wafer based solar cells p-n junction formation. Sol–gel process isalso an attractive alternative to other methods for synthesis of thin films for silicon solar cells because of lowtemperature synthesis, simple equipment to be used, thin film formability and so on.In this study sol-gel silica was synthesized using tetraethoxysilane (TEOS) as a precursor and phosphoric acid as asource of phosphate ions. Thin layer of this material is spread by spin-coating process on a surface of silicon waferand dried to form the phosphosilicate glass (SiO_2 : (P_2O_5)_n. Coated wafer is placed into diffusion furnace and held athigh temperature under nitrogen ambient for p-n junction formation.Obtained sol-gel composition were analysed by FTIR to estimate dopant concentrations. Further p-n junctions fromvarious sol-gel were produced, sheet resistance R_s and phosporous concentrations profiles were measured forcomparative analysis.