Properties of Cu Doped NiO Transparent Oxide Thin Films by Sol-Gel Solution

摘要

Wide band-gap oxide semiconductor nickel oxide thin films were prepared by sol-gel spin-coating under various annealing temperatures from 250 to 450 °C and Cu doping amounts from 0 to 20 at.%. The optical and structural properties of these films significantly depend on the temperature and the Cu doping amount.