H-band MMIC amplifiers in 250 nm InP DHBT

摘要

In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.