Observation of crystallization in amorphous phase change films induced by femtosecond laser pulses

摘要

Crystallization was induced in amorphous Ge_2Sb_2Te_5 and AgInSbTe films by femtosecond laser with an average power of 20mW at a frequency of 1 kHz and a pulsed width of 120 fs. Transmission electron microscopy observes the morphology of Ge_2Sb_2Te_5 and AglnSbTe films before and after irradiation of femtosecond laser pulses and confirms the existence of crystalline state.