As devices with smaller footprint and, higher functionality become the norm, stacked die technology will be required to enable the advancement of modern integrated packaging. As wafers become ever thinner to meet stacking requirements, new materials technology must address the challenges of handling and processing wafer thicknesses of less than 100 microns. Die attach film (DAF) has being widely used as an alternative. With its good control of bleed, consistent bond line thickness and simplified operation. In this paper, a kind of thermoplastic film with good thermal conductivity was developed for die attachment application and some of its properties, such as shear strength and, thermal conductivity were investigated. In the present work, the formula of the DAF matrix has been determined and in order to improve thermal conductivity of DAF, silicon carbide (SiC) particles with high thermal conductivity were selected to add as filler and in the content of SiC particles on the property of the DAFs were also investigated. Shear tests were conducted to measure the bonding strength of the DAFs. The results show that the films reached a 6.5 MPa in terms of average shear strength and after plasticizing it could reach 3.5 MPa. The thermal conductivity of the DAFs was 0.37W/ m·K.
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