Nitrogen incorporated fullerene (C60) films using pulsed laser deposition for optoelectronic application

摘要

Using pulsed excimer laser thin C60 films were deposited at room temperature. C60/p-silicon heterojunction was fabricated by deposition of C60 on the silicon substrate. Nitrogen gas was introduced in the pulsed laser deposition chamber. The nitrogen partial pressure (NPP) is varied. The optical gap increases with higher NPP and for the film deposited at NPP 60 mTorr and above the optical gap become suitable for optoelectronic application. The optical gap of films is observed to be from about 1.8 to 2.8 eV. The current density- voltage (J-V) characteristics show tremendous improvement with nitrogen incorporation. At high NPP, high value of the Tauc parameter indicates less disorder. The promising properties of the C60 films make them interesting for the optoelectronic applications.