Room Temperature Terahertz detection in nanowire- and graphene-based nanotransistors

摘要

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene (mono and bilayer) channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10~(-11) W/Hz~(1/2), and high-speed response.