Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses

摘要

Novel device design and process innovations made at GeneSiC on SiC Junction Barrier Schottky (JBS) rectifiers result in a significant increase of surge current capability with a 33% decrease in power dissipation at 10x rated current. On the 1200 V-class rectifiers, a clear signature of avalanche-limited breakdown with low leakage currents is observed at temperatures as high as 240 °C. Almost temperature independent Schottky barrier heights of 1.2 eV and ideality factors < 1.05 are measured on GeneSiC's JBS rectifiers, which is evidence of a homogenous interface between the Schottky metal and the SiC surface. A near theoretical Richardson's constant of 138 A/cm~2K~2 (for 4H-SiC) is directly extracted from the forward Ⅰ-Ⅴ characteristics. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC's GA100XCP 12-227 co-pack offers 88% and 47% reduction at 125 °C in the IGBT and free-wheeling diode switching energy losses, respectively. This results in an overall switching loss reduction of about 28% as compared to its silicon counterpart.