Low-temperature synthesis of single-crystal AIN particles by chemical vapor deposition for phosphor applications

摘要

The fabrication of AIN single-crystal particles at low reaction temperatures from 1350 to 1400 °C have been achieved by the chemical vapor deposition using AlCl_3 and NH3 as sources. The dependence on the reaction temperature (T_r) has indicated that single crystal particles, which have well-developed crystal facets, are predominantly formed at T_r lower than 1400 °C. The further increase in T_r generated polycrystalline particles with smaller sizes. The higher supply rates of AICI3 also cause the formation of smaller polycrystalline particles in addition to single-crystal particles. The mechanism of particle formation was discussed in terms of the balance of nucleation and subsequent growth processes.