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Effects of CuO Addition on the Microstructure and Microwave Dielectric Properties of MgTa_2O_6 Ceramics

机译:CuO的添加对MgTa_2O_6陶瓷微结构和微波介电性能的影响

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MgTa_2O_6 powders with the tetragonal phase were synthesized by mixed oxide method at 1100°C with the molar ratios of MgO and Ta_2O_5 from 1:1 to 1.2:1. The microwave dielectric properties of sintered MgTa_2O_6 ceramics without additives at 1400°C for 6h, which consists of tetragonal and orthorhombic phases were investigated. The ceramic possesses a dielectric constant of 27.5, a high Q×f value of 156000 GHz and a temperature coefficient of resonant frequency of 21.6 ppm/°C at 6~(-10) GHz. Different amounts of CuO was used as sintering additives to lower the sintering temperature of MgTa_2O_6 ceramics. The effect of CuO doping on the microstructure, densification and the microwave dielectric properties of MgTa_2O_6 was studied. The results indicate that the 1-5 wt. % CuO dopant can lower the sintering temperatures dramatically. The second phase of CuTa_2O_6 was found in MgTa_2O_6 ceramics, which caused the deterioration of Q×f value of the ceramics.
机译:在1100℃下通过混合氧化物法合成了具有四方相的MgTa_2O_6粉末,MgO和Ta_2O_5的摩尔比为1:1至1.2:1。研究了由四方相和正交相组成的不含添加剂的MgTa_2O_6烧结陶瓷在1400℃下6h的微波介电性能。该陶瓷的介电常数为27.5,Q×f值为156000 GHz,在6〜(-10)GHz时的谐振频率温度系数为21.6 ppm /°C。不同数量的CuO被用作烧结添加剂以降低MgTa_2O_6陶瓷的烧结温度。研究了CuO掺杂对MgTa_2O_6的微观结构,致密化和微波介电性能的影响。结果表明1-5重量%。 %的CuO掺杂剂可以大大降低烧结温度。在MgTa_2O_6陶瓷中发现了第二相CuTa_2O_6,导致陶瓷的Q×f值下降。

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