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Fabrication and Study of BiNbO_4 Ceramics

机译:BiNbO_4陶瓷的制备与研究

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摘要

Aim of the present research was to fabricate and study crystalline structure as well as dielectric properties of BiNbO_4 ceramics. In the present study BiNbO_4 ceramics was fabricated by solid state reaction from the mixture of simple oxides viz. Bi2O_3, and Nb_2O_5. Stoichiometric mixture of the powders was thermally analyzed so parameters of the thermal treatment were determined. The EDS measurements proved conservation of the chemical composition of the ceramic powder after calcination (T=800°C). Free sintering at T=870 - 1080 °C was used for fabrication of the ceramic samples. Morphological analysis using scanning electron microscopy was performed. The crystalline structure of the sintered samples were examined by X-ray diffraction method at room temperature. It was found that for low temperature of sintering (T<1000 °C) bismuth niobate crystallized in orthorhombic symmetry Pnna (52) whereas for high sintering temperature (T>1000 °C) BiNbO_4 exhibited anorthic symmetry P-l (2). Low frequency (v=100Hz - 1MHz) impedance spectroscopy was applied to study influence of the sintering temperature on dielectric properties of bismuth niobate at room temperature. The equivalent circuit method was used for analysis of the impedance data.
机译:本研究的目的是制造和研究BiNbO_4陶瓷的晶体结构以及介电性能。在本研究中,BiNbO_4陶瓷是通过固态反应由简单氧化物的混合物制成的。 Bi2O_3和Nb_2O_5。对粉末的化学计量混合物进行热分析,从而确定热处理的参数。 EDS测量证明煅烧后(T = 800°C)陶瓷粉末的化学成分保持不变。 T = 870-1080°C的自由烧结用于陶瓷样品的制造。使用扫描电子显微镜进行形态分析。在室温下通过X射线衍射法检查了烧结样品的晶体结构。已发现,对于低烧结温度(T <1000°C),铌酸铋以正交斜对称Pnna结晶(52),而对于高烧结温度(T> 1000°C),BiNbO_4表现为反对称P-1(2)。利用低频(v = 100Hz-1MHz)阻抗谱研究了烧结温度对室温下铌酸铋的介电性能的影响。等效电路方法用于分析阻抗数据。

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