首页> 外文会议>CICC-7;China international conference on high-performance ceramics >Synthesize Ti_3SiC_2 from TiH_2 by Pressureless Sintering
【24h】

Synthesize Ti_3SiC_2 from TiH_2 by Pressureless Sintering

机译:无压烧结从TiH_2合成Ti_3SiC_2

获取原文

摘要

In this paper, titanium silicon carbide (Ti_3SiC_2) powders were synthesized from TiH_2 as Ti source by pressureless sintering in flowing argon atmosphere without preliminary dehydrogenation. Starting materials are powder mixtures with the mole ratio of 3TiH_2/Si/2C or 3TiH_2/SiC/C. Both kinds of starting materials were sintered in a tube furnace at the temperature range from 1300°C to 1500°C for 10~180min in flowing argon atmosphere. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the phase compositions and morphology of the products after different treatments. It was showed that almost single phase Ti_3SiC_2 powder (95 wt.%) can be synthesized by pressureless sintering from 3TiH_2/Si/2C powders at 1400~1425°C for about 180min or from 3TiH_2/SiC/C powders at 1425~1500°C for about 180min. From SEM micrographs, as-synthesized samples were porous. Most plate-like grains were about 5~10 μm in diameter and 1~2 μm in thickness.
机译:本文以TiH_2为Ti源,在不进行预脱氢的情况下,在流动的氩气气氛下进行无压烧结,合成了碳化钛硅(Ti_3SiC_2)粉末。原料是摩尔比为3TiH_2 / Si / 2C或3TiH_2 / SiC / C的粉末混合物。在流动的氩气气氛中,将两种原料在1300℃至1500℃的管式炉中烧结10〜180min。使用X射线衍射(XRD)和扫描电子显微镜(SEM)表征了不同处理后产物的相组成和形态。结果表明,由3TiH_2 / Si / 2C粉末在1400〜1425℃下无压力烧结约180min或由3TiH_2 / SiC / C粉末在1425〜1500℃下无压烧结可合成几乎单相Ti_3SiC_2粉末(95 wt。%)。 C约180分钟。根据SEM显微照片,合成后的样品是多孔的。多数板状晶粒的直径约5〜10μm,厚度约1〜2μm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号