Preparation and Characterization of High Purity β-SiC Powder

摘要

SiC powder can be produced generally through the Acheson process and it is required long carbothermic reaction time of SiO_2 with carbon powder around 2200 °C ～ 2400 °C. Due to the high reaction temperature and long reaction time of the process, the powders produced have a large particle size and consist of mostly alpha phase SiC. Synthetic temperature of beta phase SiC powder is known to produce at 1700 °C ～ 1900 °C which is lower temperature than that of alpha phase SiC powder. We prepared p-SiC powder by heating precursor derived from the mixture of phenolic resin and tetraethyl orthosilicate. The precursor was heated at 1800 °C for 4 h in an Ar atmosphere. In order to examine the pyrolysis residue after the heat treatment, the SiC powder was analyzed with XRD and SEM. The X-ray diffraction result of the SiC powder shows the diffraction peaks around 35°, 60°, and 73° corresponded to the beta SiC phase. P-SiC powder prepared in this study contains lower metallic impurities compare than that of a-SiC powder prepared from Acheson method and is able to use as a good starting material for SiC single crystal growing.