IGBT inverter with increased power density by use of a high- temperature-capable and low-inductance design

摘要

Increasing the power density is a key development factor for power electronic inverter systems. In [1] a converter system enabling a power density of 20kW/l with the use of novel devices like SiC JFET switches and efficient matrix converter topology was demonstrated. The point of interest is how much power density is possible in a present commercial, classical full bridge inverter system through the design optimization of the IGBT module and the inverter. The output power of such a system is not only limited by the semiconductors' power losses and their maximum operation temperature, but also by stray inductances defining maximum switchable currents in a given set-up. At the same time peripheral devices like control electronics and passive components can also limit the power density through their temperature limit. This paper demonstrates the power density enhancements achievable through usage of devices with higher operation temperatures in an ultra-low inductance design also taking care of periphical temperature requirements.