Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

摘要

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.