Carbon nanotube-based power diode

摘要

Power diodes are frequently used in power converters and inverters as freewheeling and snubber components. In many applications, power diodes are required to meet demands such as short reverse recovery time, soft recovery, high breakdown voltage and a low forward voltage drop at the rated forward current with small size. Bundled Single-walled Carbon Nanotube (BSWCNT) p-type semiconductor is a strong candidate material for power diodes because of the selective electron transport that can be used in hot carrier, ballistic transport, high current density, mechanical stiffness, thermal, and chemical stability. In addition, carbon nanotube-based power diode provides high breakdown voltage, high electrical conductivity in the forward mode, and high current output capability. This paper presents modeling, design, and simulation of the Bundled Single-Walled Carbon (BSWCNT) nanotechnology-based power diode.