Gold-doped high resistivity Czochralski-silicon for integrated passive devices and 3D integration

摘要

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing very high resistivity wafers suitable for integrated passive devices and 3D integration. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 Ωcm, we use Au ion implantation to increase the resistivity. Coplanar waveguides fabricated on the wafers show strongly reduced attenuation. Hall measurements indicate that the increase in resistivity is clearly due to a reduction in free carriers. The temperature dependence of the free carrier concentration in the range of 200–350K indicates that the Fermi-level is virtually pinned mid-gap.