X-ray diffraction characterization was performed on polycrystalline InP films deposited on glass substrates by molecular-beam deposition at substrate temperatures of 200, 250, and 320°C. The peak shift analysis developed for estimating stacking-fault probability in fcc metals is applied to cubic semiconductors for the first time. The net stacking-fault probabilities α(hkl)SF = α(hkl)ISF − α(hkl)ESF (α(hkl)ISF and α(hkl)ESF being intrinsic and extrinsic stacking-fault probabilities, respectively) together with the fractional changes ε(hkl)SF in interplanar spacing at the stacking fault for (111)- and (100)-oriented crystallites are presented as a function of the substrate temperature.
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