首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >A NOVEL PROCEDURE FOR FABRICATING SUB-MICRON TEXTURES ON VARIOUS THICK CRYSTALLINE-SILICON SOLAR CELLS DOWN TO 50 μm WITH LOW-REFLECTIVITY IN WIDE WAVELENGTH
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A NOVEL PROCEDURE FOR FABRICATING SUB-MICRON TEXTURES ON VARIOUS THICK CRYSTALLINE-SILICON SOLAR CELLS DOWN TO 50 μm WITH LOW-REFLECTIVITY IN WIDE WAVELENGTH

机译:一种新的方法,用于在各种厚的晶体 - 硅太阳能电池上制造下微米纹理,在宽波长下具有低反射率的50μm

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Hetero-junction back-contact (HBC) solar cell is the structure realizing the highest efficiency ever obtained. For lowering the cost of crystalline-silicon (c-Si) solar cells, thinning of the original c-Si substrates is also required to reduce the material cost. In such c-Si substrates thinner than 100 μm, the optical reflection of sunlight at the back surface becomes an important key technology, and thus, texturing of the back surface is to be also important. However, in HBC solar cells, the electrode patterning must be performed on such textured back-surface. Then, small size textures should be developed for realizing both high reflectivity at the back-surface and efficient pattern-formation of the back-electrodes. Small size textures are also required for thin c-Si, since several μm size textures fluctuate the c-Si thickness itself and induce unstable performance. In the paper, it is demonstrated that the size of texture can be controlled from 10 μm or more to sub-micron by adding glass microparticles in the conventional alkaline-based texture-forming chemicals, and that such textured structures exhibited the reflectivity lower than 10% in the range of wavelength from 600 nm to 950 nm even for the 50 μm-thick c-Si substrates, before anti-reflection coating.
机译:异结返回接触(HBC)太阳能电池是实现最高效率的结构。为了降低晶体 - 硅(C-Si)太阳能电池的成本,还需要更薄的原始C-Si基板来降低材料成本。在比100μm的这种C-Si基板上,后表面的阳光的光学反射成为重要的关键技术,因此,背面的纹理也是重要的。然而,在HBC太阳能电池中,必须在这种纹理的背面执行电极图案化。然后,应开发小尺寸纹理,以实现在背面的高反射率和背电极的有效图案形成。薄C-Si还需要小尺寸纹理,因为几μm尺寸纹理在C-Si厚度本身波动并引起不稳定的性能。在本文中,证明通过在常规碱性纹理化学品中添加玻璃微粒,纹理的尺寸可以从10μm或更多的控制到亚微粒,并且这种纹理结构表现出低于10的反射率在抗反射涂层之前,即使对于50μm厚的C-Si基材,波长范围为600nm至950nm。

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