CHARACTERIZATION OF FULL-BSF SOLAR CELL AND PERC SOLAR CELL UNDER LOW IRRADIANCE INTENSITIES

摘要

Good passivation property on p-type silicon surface was obtained for SiO_x /SiN_x stack layer, making PERC achieve the efficiency of 20.12 %. The cell response on photoluminescence (PL) reveals that SiO_x/SiN_x stack layer provides good passivation property even under low irradiance intensity, compared with the AlO_x/SiN_x stack layer. Because of the robustness on passivation property, the correlation between photovoltaic Ⅰ-Ⅴ curve and the implied photovoltaic Ⅰ-Ⅴ curve, derived from Suns-V_(oc) measurement, shows the consistency in SiO_x/SiN_x passivated PERC, as well as in AlO_x/SiN_x passivated PERC. According to certificated result, it shows that SiO_x.SiN_x passivated PERC and full-BSF cell have consistency of efficiency dependence on irradiance intensity, even under the low intensity of 200 W/m~2.