An accurate opto-electrical modeling of multi-crystalline silicon solar cells is presented. The proposed model aims at setting a reliable set of parameters, that will be used as starting point in future optimization studies. The trustworthiness of the model is verified by calibrating (ⅰ) optical properties of the heavily doped emitter and of the full-area Al-based back surface field, (ⅱ) the front surface recombination velocity, and (ⅲ) the effective minority carrier diffusion length. In addition, we modeled the effect of Al-based back surface field on the back surface recombination velocity.
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