One more way to increase the recovery softness of fast high-voltage diodes

摘要

There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p⁺-p-n⁻-n^′-n⁺ diode using local reduction of life time in n part of layer adjacent to n⁺. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ∼ 4500–4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/μs.