Model of effect of pn-junction magnetic field modulation

摘要

The article considers distribution of flows of charge carriers in operating conditions of dual-collector bipolar magnetotransistor. The proposed mechanism of distribution of charge carriers clears up occurrence of an inverse target signal of the transistor with a constant direction of a magnetic field. The model for flowing of electron-hole plasma along the pn-junction well-substrate in a magnetic field with induction B on two sides from the emitter is presented.