The Anisotropic Magnetoresistance Preparation of Permalloy Ni81Fe19 Film

摘要

The anisotropic magnetoresistance (AMR) of permalloy Ni81Fe19 thin films, which applied as the electronic compass in MEMS, deposited by RF magnetron sputtering system had been investigated on different thickness, substrate temperature, post annealing temperature. The effect of film thickness on AMR is obvious for the thinner thickness (<100 nm), the influence of thickness on AMR is gradually weakened along with the increasing of thickness, the magnitude of AMR is gradually stable for the added thickness (>200nm). The substrate and post annealing temperatures are crucial to the increment of AMR. The suitable choice of the two temperatures can make the crystalline grain increased, the areas of crystalline boundary decreased, the scattering of conduct electron decreased, thus the film resistivity fell down and the effect of AMR increased.