A frequent-value based PRAM memory architecture

摘要

Phase Change Random Access Memory (PRAM) has great potential as the replacement of DRAM as main memory, due to its advantages of high density, non-volatility, fast read speed, and excellent scalability. However, poor endurance and high write energy appear to be the challenges to be tackled before PRAM can be adopted as main memory. In order to mitigate these limitations, prior research focuses on reducing write intensity at the bit level. In this work, we study the data pattern of memory write operations, and explore the frequent-value locality in data written back to main memory. Based on the fact that many data are written to memory repeatedly, an architecture of frequent-value storage is proposed for PRAM memory. It can significantly reduce the write intensity to PRAM memory so that the lifetime is improved and the write energy is reduced. The trade-off between endurance and capacity of PRAM memory is explored for different configurations. After using the frequent-value storage, the endurance of PRAM is improved to about 1.6X on average, and the write energy is reduced by 20%.