Ordered / disordered broadband antireflective structures for near-infrared detector applications

摘要

This study reports broadband antireflective subwavelength structures (SWS) on various semiconductor materials for near-infrared detector applications. Two fabrication methods are proposed, i.e., a lenslike shape transfer and an overall dry etch process of Ag nanoparticles. These methods provide relatively simple, fast, inexpensive process steps, which is applicable for practical device applications. The fabricated SWS showed extremely lower reflectance spectra compared to that of flat surface in the near-IR range, indicating good agreement with the simulation results. We also propose amorphous silicon SWS on InGaAs photodetector to enhance the absorption efficiency.