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Effect of Deposition Voltage on the Composition, Morphology and Optical Properties of ZnS Thin Films Prepared by Cathodic Electrodeposition

机译:沉积电压对阴极电沉积制备的ZnS薄膜组成,形态和光学性质的影响

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Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel,simple cathodic electrodeposition method under atmospheric pressure.These thin films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature.The effects of deposition voltage on the phase composition,morphology and photoluminescence behavior of the thin films were investigated.XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation.Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter.With the increase in the deposition voltages,the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases.Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.
机译:在大气压下通过新颖的简单的阴极电沉积方法沉积硫化锌(ZnS)薄膜在氧化铟锡(ITO)底物上。通过X射线衍射(XRD),原子力显微镜(AFM)表征薄膜。在室温下光致发光光谱(PL)。研究了薄膜相成分,形态和光致发光行为的沉积电压的影响。XRD分析表明,沉积的薄膜沿(200)取向是高优先的生长。 AFM和XRD分析表明,ZnS薄膜的表面由直径约为50nm的均匀晶粒构成。随着沉积电压的增加,所获得的薄膜的结晶改善和ZnS薄膜的晶粒尺寸增加。在室温下在室温下在475〜490nm和500〜530nm处观察到的莫隆发射峰,以激发210nm。

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