A Short-channel silicon-based Split-Drain MAGFET measuring from 90 ??T

摘要

The sensing capability of a Short Split-Drain MAGFET with W/L=10 ??m/2 ??m designed and manufactured with AMS 0.35 ??m technology is explored. Magnetic flux densities from 90 ??T have been measured with this Short MAGFET. The measured results show that the drain current imbalance increases significantly when this MAGFET changes from the linear to the saturation region at the same gate voltage. Nevertheless, being in the same operation region at the same gate voltage, the drain current imbalance does not significantly vary with the drain voltage. When the gate voltage increases the drain current imbalance also increases proportionately. Considering its sensing capability and its reduced active area, this Short Split-Drain MAGFET may be integrated with complex circuits in a single chip.