首页> 外文期刊>Solid-State Electronics >Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs
【24h】

Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs

机译:利用短分流MAGFET的磁感应功能

获取原文
获取原文并翻译 | 示例
       

摘要

The magnetic sensing capabilities of Split-Drain MAGFETs (SD-MAGFETs) with a channel that is a short Hall plate, herein called Short Split-Drain MAGFETs, are analyzed. In addition to the current-lines deflection effect, this paper shows that the magnetoresistance effect also contributes to establish the sensitivity of Short SD-MAGFETs. A relationship between the forces acting on the deflection direction and a model of the Hall angle are developed showing that these effects are favored notoriously when L/W ≤0.27. Furthermore, the magnetoresistance effect improves the sensitivity when the channel length is reduced. This allows to design a high-sensitivity SD-MAGFET with a reduced active area. Using the proposed model of the Hall angle with a continuous model of the geometric correction factor, a continuous variation of the Hall angle along the channel for any L/W can be obtained, and a quantitative criterion to establish which range of the L/W values corresponds to a short Hall plate and which one to a long Hall plate can be established. In order to validate the proposed design criteria, a Short SD-MAGFET with L/W =0.2 and W/ L = 10 μm/2 urn has been characterized. Sensing capabilities from 90 μT to 27 μT and sensitivities from 15.51% to 59.9% have been experimentally obtained at room temperature and in strong inversion.
机译:分析了具有作为短霍尔板的沟道的分流MAGFET(SD-MAGFET)的磁感应能力,在本文中称为短分流MAGFET。除电流线偏转效应外,本文还表明,磁阻效应还有助于建立短SD-MAGFET的灵敏度。产生了作用在偏转方向上的力与霍尔角模型之间的关系,表明当L / W≤0.27时,这些效应是众所周知的。此外,当减小沟道长度时,磁​​阻效应提高了灵敏度。这允许设计具有减小的有效面积的高灵敏度SD-MAGFET。使用提出的霍尔角模型和几何校正因子的连续模型,可以获得任意L / W沿通道的霍尔角的连续变化,并建立了确定L / W范围的定量标准值对应于一个短霍尔板,而一个可以对应一个长霍尔板。为了验证建议的设计标准,已对L / W = 0.2和W / L = 10μm/ 2的短SD-MAGFET进行了表征。在室温和强烈反演下,已通过实验获得了从90μT到27μT的传感能力和从15.51%到59.9%的灵敏度。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1239-1245|共7页
  • 作者单位

    Department of Electronics, National Institute for Astrophysics, Optics and Electronics, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico;

    rnDepartment of Electronics, National Institute for Astrophysics, Optics and Electronics, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico;

    rnDepartment of Electronics, National Institute for Astrophysics, Optics and Electronics, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, Puebla, Mexico;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MACFET; split-drain MACFET; hall effect; magnetic sensor;

    机译:MACFET;分流MACFET;霍尔效应磁传感器;
  • 入库时间 2022-08-18 01:34:55

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号