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Measuring the beam size of a focused ion beam (FIB) system

机译:测量聚焦离子束(FIB)系统的束大小

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The imaging resolution of a focused ion beam (FIB) system is perhaps more difficult to measure even than that of a scanning electron microscope, especially with a heavy-ion (Ga, e.g.) FIB, because specimen erosion by sputtering is important [1,2]. Because of this beam size is sometimes used as measure of FIB beam quality instead of imaging resolution. A beam size measurement usually consists of a rise distance experiment where the beam is swept across a discontinuity such as a knife-edge; the change in current on the knife-edge is measured as a function of beam position and used to define a beam size. Although this is apparently a straightforward measurement there are numerous possibilities for errors, among which are statistical effects, specimen erosion, distortion due to implantation and other kinds of specimen damage. It is important to take these errors into account to avoid a misinterpretation of the result of the measurement and an incorrect estimate of the beam size. We consider some aspects and difficulties of the rise distance method, and some of the errors that can be encountered as a result of beam statistics and spatially varying secondary electron yields. Based on experiment and simulation, we find for a given beam and specimen that the result of a rise distance measurement can vary by a factor of three (3) due to statistical effects (beam noise) alone.
机译:聚焦离子束(FIB)系统的成像分辨率甚至可能比扫描电子显微镜更难测量,尤其是对于重离子(例如Ga)FIB,因为通过溅射腐蚀样品很重要[1, 2]。因此,有时将光束大小用作FIB光束质量的度量,而不是成像分辨率。光束尺寸的测量通常包括一个上升距离实验,在该实验中,光束被扫过不连续的地方,例如刀口。刀沿上的电流变化随光束位置而变,并用于定义光束尺寸。尽管这显然是一种简单的测量方法,但仍有许多错误的可能性,其中包括统计影响,标本腐蚀,由于植入引起的变形以及其他类型的标本损坏。重要的是要考虑这些误差,以避免对测量结果的误解和对光束尺寸的错误估计。我们考虑了上升距离方法的某些方面和困难,以及由于束统计和空间变化的二次电子产量而可能遇到的一些误差。基于实验和仿真,我们发现对于给定的梁和样本,仅由于统计效应(光束噪声),上升距离测量的结果可能会发生三(3)倍的变化。

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