Novel Logic Non-Volatile Memory with Highly Reliable Performances for Autotronic Application

摘要

A novel logic non-volatile memory (NVM), which is fabricated by generic logic CMOS process without any additional thermal budget and with only two additional mask layers for well implantation, is proposed in this paper. Compared to the traditional cell structure, the proposed memory cell features 45% cell size reduction and overall memory macro has 37.5% area shrinkage. In addition, the NVM macro performs excellent programming/erase endurance capability up to 10K cycles and good data retention at 175°C. The NVM macro can fulfill the autotronic reliability requirements of the thermal stress conditions with 125°C high temperature operating life test over 1K hours.