40nm embedded Select in Trench Memory (eSTM) Technology Overview

摘要

The eStM (embedded Select in Trench Memory) is a floating gate based non-volatile memory cell conceived, developed and industrialized by STMicroelectronics for General Purpose and Secure Microcontrollers embedded applications. Thanks to its unique architecture, the eStM cell gathers the advantages of a conventional split-gate NVM cell together with a more compact cellbit area than a typical 1T Flash Memory cell, and it is claimed to represent the scalability limit for a floating gate based NOR NVM.