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Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization

机译：利用瞬态表征对超薄氧化物反熔丝位电池进行寿命和损耗电流建模

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The lifetime modeling of antifuse bitcells is studied using transient measurements. Firstly, the wearout current is successfully modeled as Fowler-Nordheim. Secondly, the TDDB power-law voltage acceleration model is validated down to 300ns for a stress voltage of 5.5V. Lifetime results are compared with the Multi-Vibrational Hydrogen Release Model.

机译：使用瞬态测量研究了反熔丝位单元的寿命建模。首先，将磨损电流成功建模为Fowler-Nordheim。其次，针对5.5V的应力电压，对TDDB功率律电压加速模型进行了低至300ns的验证。将寿命结果与多振动氢释放模型进行比较。

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《IEEE International Memory Workshop 》|2010年|p.1-4|共4页
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作者
Deloge Matthieu; Allard Bruno; Candelier Philippe; Damiens Joel; Le-Roux Elise; Rafik Mustapha;
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正文语种
中图分类存贮器 ;
关键词
Antifuse; Fowler-Nordheim; Hydrogen release; TDDB; breakdown; lifetime; memory; ultra-thin oxide;

机译：反熔丝;福勒-诺德海姆;氢释放; TDDB;分解;寿命;记忆;超薄氧化物;

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专利

1. Application of a TDDB Model to the Optimization of the Programming Voltage and Dimensions of Antifuse Bitcells [J] . Deloge M., Allard B., Candelier P., Electron Device Letters, IEEE . 2011 ,第8期

机译：TDDB模型在反熔丝位单元编程电压和尺寸优化中的应用
2. Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization [J] . Khlifi Y, Kassmi K, Aziz A, The European physical journal. Applied physics . 2004 ,第1期

机译：反转模式下金属/超薄氧化物/半导体结构的Fowler-Nordheim电流建模，缺陷表征
3. Characterization and modeling of the tunneling current in Si-SiO_2-Si structures with ultra-thin oxide layer [J] . Andrea Ghetti Microelectronic Engineering . 2001 ,第1a4期

机译：超薄氧化层Si-SiO_2-Si结构中隧穿电流的表征与建模
4. Lifetime and Wearout Current Modeling of Ultra-thin Oxide Antifuse Bitcells Using Transient Characterization [C] . Matthieu Deloge, Bruno Allard, Philippe Candelier, IEEE International Memory Workshop . 2010

机译：使用瞬态表征的超薄氧化物反熔丝位电池的寿命和磨损电流建模
5. Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) silicon dioxide and high-kappa gate dielectrics. [D] . Li, Fei. 2006

机译：紧凑的栅极电容和栅极电流建模，可用于超薄（EOT〜1 nm及以下）二氧化硅和高kappa栅极电介质。
6. Ultrafast Band Engineering and Transient Spin Currents in Antiferromagnetic Oxides [O] . Mingqiang Gu, James M. Rondinelli -1

机译：反铁磁氧化物中的超快带工程和瞬态自旋电流
7. An evaluation of strength wearout models for the lifetime prediction of adhesive joints subjected to variable amplitude fatigue [O] . Shenoy V, Ashcroft IA, Critchlow GW, 2009

机译：强度磨损模型的评估，用于预测可变振幅疲劳的胶粘接头的寿命

Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization

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