A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnS-SiO2 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.
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机译：提出并证明了一种N掺杂的Sb 70 Te 30 的多层横向PCM。电流扫描和脉冲模式动态电阻测试均表明该设备存在多种状态，可用于多级数据存储。仿真显示了多级工作机制，并验证了实验结果。通过增加沉积的N掺杂Sb 70 Te 30 和ZnS-SiO 2 的周期并使用不同的薄膜，可以实现更多的中间态。厚度，这将是大幅度增加PCM数据存储容量的有前途的解决方案。
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