Impact of material composition on the write performance of phase-change memory devices

摘要

The phase-change memory (PCM) technology represents one of the most attractive concepts for next generation data storage. PCM operation is based on the particular properties of a chalcogenide alloy, the ternary compound Ge2Sb2Te5, which is able to perform fast and reversible transitions between a crystalline, high-conductive phase and an amorphous, low-conductive one, thus enabling the binary data storage. Although the ternary alloy Ge2Sb2Te5 is the best recognised solution to meet the device reliability and performance specifications, other alloys are being studied within the GeSbT e ternary compound system in order to investigate and to enlarge the possible spectrum of PCM applications. This work focuses both on the program parameters and on the write performances of a Sb-rich GST composition, suggesting a change in the physical properties of the PCM material and a transition from nucleation to growth-dominated crystallization mechanism, both controlled by the material composition engineering. This enables new challenging performance parameters.