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Towards high efficiency on full wafer a-Si:H/c-Si heterojunction solar cells: 19.6 on 148cm2

机译:在全晶片a-Si:H / c-Si异质结太阳能电池上实现高效率:在148cm 2 上达到19.6%

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In this work, we present our recent technological improvements realized on 148.5cm2 amorphous/crystalline double heterojunction solar cells. In particular, we have transferred our old solar cells fabrication process to an integrated JUSUNG large area cluster (PECVD/ MOCVD/ PVD). An optimization of all the fabrication steps separately, as well as a careful preparation of the silicon wafer''s surface has allowed us to obtain efficiencies up to 19.6 % on large area solar cells (148.5cm2). The homogeneity and reproducibility of the process developed has been demonstrated on several successive batches with all efficiencies measured over 19.2%. All the fabrication process is performed at temperatures <200°C.
机译:在这项工作中,我们介绍了我们在148.5cm 2 非晶/晶体双异质结太阳能电池上实现的最新技术改进。特别是,我们已经将旧的太阳能电池制造工艺转移到集成的JUSUNG大面积集群(PECVD / MOCVD / PVD)中。分别优化所有制造步骤以及精心准备硅晶片的表面,使我们在大面积太阳能电池(148.5cm 2 )上可获得高达19.6%的效率。 。已开发的方法的均质性和可重复性已在几批连续批次中得到证明,所有效率均超过19.2%。所有制造过程均在<200°C的温度下进行。

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