Silicon nitride (SiNx) films deposited by direct plasma-enhanced chemical vapor deposition (PECVD) are widely used in silicon solar cell fabrication as passivation layers, yielding very low surface recombination velocities on crystalline Si (c-Si) material. So far, there have been some reports on deep-level transient spectroscopy (DLTS) of as-deposited SiNx layers on Si, but the impact of rapid thermal anneal (RTA) processing step and the textured surface has not been investigated yet. In this paper, low frequency direct PECVD Si-SiNx interface properties with and without plasma NH3 pre-treatment, with and without RTA on both flat (100) and (111) orientations and textured n-type silicon samples have been investigated with DLTS.
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机译：通过直接等离子增强化学气相沉积（PECVD）沉积的氮化硅（SiN x ）膜已广泛用于硅太阳能电池制造中作为钝化层，从而在晶体Si（c- Si）材料。到目前为止，已有关于硅上沉积的SiN x 层的深层瞬态光谱（DLTS）的报道，但是快速热退火（RTA）处理步骤和纹理化表面的影响尚未被调查。在本文中，在平坦（100）和（）上使用RTA和不使用RTA进行等离子体NH 3 预处理的情况下，进行低频直接PECVD Si-SiN x 界面性能111）取向和织构n型硅样品已通过DLTS进行了研究。
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