Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

摘要

We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50µm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.