Fast robust gate-drivers with easily adjustable voltage ranges for driving normally-on wide-bandgap power transistors

摘要

Wide-bandgap (WBG) semiconductors, such as gallium nitride (GaN), are more and more being used in switching power devices. An AlGaN/GaN/AlGaN Double Heterojunction Field Effect transistor (DHFET) was developed in previous work and needed to be tested. The used test circuit was a buck converter. This type of converter, in addition with the normally-on switching behaviour of the GaN-based transistors, requires dedicated gate drive circuitry, resulting in the development of three types of gate-drivers. This paper presents the topology and performance of these drivers. Because of the type of converter, the drivers need to be galvanically isolated. Furthermore, because the experimental GaN transistors are normally-on, the drivers need to be robust so that they apply a negative gate-to-source voltage to switch off the transistor in case an error occurs in the driver. A third requirement for the drivers is that it has to be easy to adjust the voltage levels, in order to test the devices at different gate-to-source voltage conditions. A final requirement is that it has to be possible to construct the drivers with readily available electronic components. Because the drivers are galvanically isolated, there is a parasitic isolation capacitance in the DC-DC-converter of the drivers. This gives rise to a common-mode current which possibly can disturb the operation of the driver. The article also discusses this common-mode problem.