Analysis of thermal behaviors of Spin-Torque-Transfer RAM: A simulation study

摘要

We present an accurate model of the self-heating effect in the Spin-Torque-Transfer RAM (STTRAM) using finite-volume-methods and thermal RC based compact models. We couple device level thermal simulation to the self-heating phenomenon to show that self-heating during write operation can result in significant temperature increase in STTRAM which in turn adversely affect the read disturb, leakage energy and sensing accuracy.