A Class-S Power Amplifier architecture seems to be an attractive alternative for classical PAs due to offered very high efficiency operation. Switching mode PA principle assumes combined operation based on digital, single - bit Delta-Sigma (ΔΣ) modulated signals and RF analog signals, what complicates design and analysis procedures. However the Class-S PA topology is known, there are not any universal design methods which can be unambiguous applied to considered architecture. Presented work defines and describes design method for Class-S PA based on GaN HEMT transistors. Moreover main simulation results for Class-S architecture based on Current Switching Class-D (CSCD) configuration at the carrier frequency of 900 MHz have been performed.
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