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Overcoming obstacles for developing carbon nanotube-based devices

机译:克服开发基于碳纳米管的设备的障碍

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Carbon nanotubes (CNTs), one of the most popular nanoscale materials, have been investigated intensively over the last decade for many of their potential applications. These studies were largely based on theoretical and experimental results from limited numbers of prototype CNT-based devices including field effect transistors (FETs), electron field emitters, interconnects, sensors, probes, energy storage and energy conversion devices. However, the lack of techniques for controlled mass production of CNT-based nanodevices and the ability to accurately characterize their electronic and optical properties have been the primary obstacles for the realization of CNTs' promising technological applications. It is therefore well recognized by the CNT research community that optimization of nano-electronics such as CNT-FETs requires a comprehensive system of nanometrology. Such a system is critical for understanding the role of the local environment, device architecture and internal structure on CNT-FET performance. Oxygen and water vapor have been shown to impact both the CNT conduction channel and the CNT-electrode interface in significantly different ways. Alterations in carrier type such as p-type to n-type, unipolar to ambipolar and changes in contact resistance can all be correlated to oxygen-induced modulation of the Schottky barrier at the nanotube-electrode interface. Shifts in threshold voltage of CNT-FETs have been attributed to the doping of oxygen adsorbate on the bulk of the CNT. The choice of the electrode material, in terms of work function and oxidation state, can influence device resistance. Defects within the CNT itself can act both as electron/phonon scattering sites as well as bonding sites for various adsorbates. In this report, the author will provide an overview of on-going research of CNTs in her group and introduce several newly developed techniques aimed at mass producing CNT-based devices and accurately characterizing their properties. The electro--nic and optical characterization of the CNT nanodevices were carried out in a unique microenvironment probe system that was developed in her group, which reveals the impact of different adsorbate species and wavelengths of light on device performance. A recent effort of combining scanning electron microscopy, micro-Raman mapping, UHV probing and numeric simulation for studying the curvature of as-grown single-walled CNT in relation to their electronic properties will also be discussed.
机译:碳纳米管(CNTs)是最流行的纳米级材料之一,在过去十年中已对其许多潜在应用进行了深入研究。这些研究主要基于有限数量的基于CNT的原型设备的理论和实验结果,这些设备包括场效应晶体管(FET),电子场发射器,互连,传感器,探针,能量存储和能量转换设备。但是,缺乏可控制的大量生产基于CNT的纳米器件的技术以及准确表征其电子和光学特性的能力一直是实现CNT的有前途的技术应用的主要障碍。因此,CNT研究界已充分认识到,优化诸如CNT-FET的纳米电子技术需要一个全面的纳米计量系统。这样的系统对于理解局部环境,器件架构和内部结构对CNT-FET性能的作用至关重要。氧气和水蒸气已显示出以显着不同的方式影响CNT传导通道和CNT电极界面。载流子类型的变化,例如p型到n型,单极性到双极性以及接触电阻的变化,都可以与纳米管-电极界面处的氧引起的肖特基势垒的调制相关。 CNT-FET的阈值电压的变化已归因于在大部分CNT上掺杂了氧吸附物。就功函数和氧化态而言,电极材料的选择会影响器件的电阻。 CNT内部的缺陷既可以充当电子/声子散射位点,也可以充当各种吸附物的键合位点。在本报告中,作者将概述其小组中正在进行的CNT研究,并介绍几种旨在大规模生产基于CNT的设备并准确表征其性能的新开发技术。电 -- CNT纳米器件的nic和光学表征是在其小组中开发的独特的微环境探针系统中进行的,该系统揭示了不同吸附物种类和光波长对器件性能的影响。还将讨论结合扫描电子显微镜,显微拉曼测绘,UHV探测和数值模拟的最新成果,以研究已生长的单壁CNT的曲率与其电子性能的关系。

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